1064nm/532nm皮秒激光对可见光CCD干扰损伤效应研究OA

With the rapid development of short-pulse laser technology,the potential threats to CCD image sensors exhibit new characteristics distinct from those induced by traditional continuous-wave or long-pulse laser.To investigate the mechanisms and principles of interference and damage caused by short-pulse laser of different wavelengths,picosecond laser with wavelengths of 1 064 nm and 532 nm,a pulse width of 30 ps,and a repetition rate of 1 Hz were employed to irradiate visible-light CCD in interference and damage experi-ments.The irradiation effects at different interference and damage stages of the CCD were characterized us-ing optical microscopy and its own imaging response.The mechanisms of short-pulse laser-induced interfer-ence and damage were analyzed,and the imaging response,microscopic morphology,and thresholds at vari-ous stages were compared for the two wavelengths.The results indicate that,for visible-light CCD,the 532 nm laser possesses stronger penetration capability through the microlens layer than the 1 064 nm laser,and its interference threshold is 1−2 orders of magnitude lower.The point-and line-damage thresholds in-duced by the 532 nm laser are approximately 2 orders of magnitude lower than those induced by the 1 064 nm laser.