Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and ChallengesOA
Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and Challenges
Chi-Hoon Lee;Seong-Hwan Ryu;Taewon Hwang;Sang-Hyun Kim;Yoon-Seo Kim;Jin-Seong Park
Division of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of KoreaDivision of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of KoreaDivision of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of KoreaDepartment of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of KoreaDivision of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea||Imec,Kapeldreef 75,B-3001 Louvain,BelgiumDivision of Materials Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea||Department of Display Science and Engineering,Hanyang University,222 Wangsimni-ro,Seongdong-gu,Seoul 04763,Republic of Korea
Oxide semiconductor(OS)Atomic layer deposition(ALD)Memory applications
Oxide semiconductor(OS)Atomic layer deposition(ALD)Memory applications
《纳微快报（英文）》 2026 (6)
80-124,45
This work was supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667),supported by Hanyang Uni-versity Industry-University Cooperation Foundation(No.202400000003943),supported by Korea Planning & Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382).
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