首页|期刊导航|华东师范大学学报(自然科学版)|一款面向室内定位与生命体征检测的多普勒辅助FMCW雷达

一款面向室内定位与生命体征检测的多普勒辅助FMCW雷达OA

A fully-integrated Doppler-assisted FMCW radar for indoor localization and vital sign sensing

中文摘要英文摘要

本文提出了一种多普勒辅助调频连续波(FMCW)雷达,该雷达兼具FMCW的精确距离分辨能力和多普勒雷达的高灵敏度,可满足室内场景的多功能应用需求.论文对关键接收模块(包括低噪声放大器、混频器、本地振荡器放大器和模拟基带电路)产生的低频噪声贡献进行了全面分析.提出了一种"射频+本振+基带"联合噪声系数改进方法,以有效抑制低频噪声.为了最大限度地减少基于电荷泵的分数N锁相环中的调频误差,采用了一种嵌套型锁相环架构及协同优化的环路参数选择方法,显著提高了啁啾线性度.该多普勒辅助FMCW雷达采用 55 nm 互补金属氧化物半导体工艺制造,在 10 Hz和 1 kHz频率下,分别实现了 32 dB和 12 dB的噪声系数,并在 3.52 GHz的啁啾带宽内,实现了 0.003 9%的啁啾线性度,从而实现最大检测距离为 19.41 m和距离分辨率为 4.7 cm.该雷达芯片面积为 12.7 mm2,在 3.3 V电源电压下,FMCW模式功耗为594 mW,多普勒模式功耗为432 mW.

This paper presents a Doppler-assisted frequency-modulated continuous-wave(FMCW)radar that combines the precise range resolution capability of FMCW with the high sensitivity of Doppler radar,enabling versatile performance for indoor applications.A comprehensive analysis of low-frequency noise contributions from key receiver blocks,including the low-noise amplifier(LNA),mixer,local oscillator(LO)buffer,and analog baseband(ABB)circuits,is conducted.An"RF+LO+BB"joint noise figure(NF)improvement method is proposed to effectively suppress the low-frequency noise.To reduce frequency modulation(FM)error in charge-pump-based fractional-N phase-locked loop(PLL),a nested-PLL architecture with a co-optimized loop parameter selection method is employed,resulting in significantly improved chirp linearity.Fabricated in a 55 nm CMOS technology,the proposed Doppler-assisted FMCW radar achieves NFs of 32 dB and 12 dB at 10 Hz and 1 kHz,respectively,and a chirp linearity of 0.003 9%over a 3.52 GHz chirp bandwidth(BW),resulting in a maximum detection range of 19.41 m and a range resolution of 4.7 cm.The radar occupies a die area of 12.7 mm2 and consumes 594 mW in FMCW mode and 432 mW in Doppler mode under a 3.3 V supply.

张愉沁;张子桐;张润曦

华东师范大学 微电子电路与系统研究所,上海 200241华东师范大学 微电子电路与系统研究所,上海 200241华东师范大学 微电子电路与系统研究所,上海 200241

信息技术与安全科学

互补金属氧化物半导体雷达频率调制连续波多普勒

frequency-modulated continuous waveDopplerradarcomplementary metal-oxide semiconductor

《华东师范大学学报(自然科学版)》 2026 (2)

128-138,11

上海东方英才青年项目(15904-412214-24013)

10.3969/j.issn.1000-5641.2026.02.012

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