一款20~25 GHz基于变压器的改进型多路径噪声抵消低噪声放大器OA
A 20~25 GHz transformer-based improved multi-path noise-canceling low noise amplifier
提出了一种 20~25 GHz低噪声放大器,该放大器采用基于变压器的改进型多路径噪声抵消(IMNC)结构.所提出的IMNC方法解决了传统双路径噪声抵消(DPNC)技术的关键局限性.DPNC技术使用共源(CS)级和共栅(CG)级来相互抵消噪声,但是并不能完全消除CG级的噪声.尽管增加CG晶体管的跨导可以改善CS级的噪声消除,但它引入了功耗和噪声性能之间的权衡.为了克服这些限制,IMNC架构引入了一个无源网络,即 3圈堆叠变压器,使得CG级增益提高,在不增加功耗的情况下改善了CS级的噪声抵消效果.该变压器还构建了一个额外的噪声传输路径,使部分CG级噪声能够实现自抵消.与传统的DPNC方法相比,这些改进带来了更好的噪声性能和功率效率.本文采用 40 nm 互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺制造,峰值增益为 14.5 dB,3 dB带宽为 5.1 GHz(在 20~25 GHz频段),最小噪声系数(Noise Figure,NF)为 2.0 dB,功耗为 22.4 mW,核心面积为0.16 mm2.
This paper presents a 20~25 GHz low noise amplifier that employs a transformer-based improved multi-path noise-canceling(IMNC)architecture.The proposed IMNC approach addresses key limitations of the conventional dual-path noise-canceling(DPNC)technique that employs common-source(CS)and common-gate(CG)stages to suppress each other's noise.In DPNC designs,noise from the CG stage cannot be fully canceled,and increasing CG transconductance to enhance CS-stage noise suppression results in a tradeoff between noise performance and power consumption.To overcome these limitations,the proposed IMNC architecture introduces a three-coil transformer that passively boosts the gain of the CG stage,thereby improving CS-stage noise cancellation without additional power consumption.The transformer also provides an additional noise-canceling path that enables partial self-cancellation of CG stage noise.These improvements lead to better noise performance and power efficiency compared to the conventional DPNC approach.Fabricated in a 40 nm complementary metal oxide semiconductor(CMOS)process,the proposed low noise amplifier achieves a peak gain of 14.5 dB,a 3 dB bandwidth of 5.1 GHz spanning 20 to 25 GHz,and a minimum noise figure(NF)of 2.0 dB,while consuming 22.4 mW of power and occupying a core area of 0.16 mm2.
王梓尧;卢禹日;张润曦
华东师范大学 微电子电路与系统研究所,上海 200241华东师范大学 微电子电路与系统研究所,上海 200241华东师范大学 微电子电路与系统研究所,上海 200241
信息技术与安全科学
互补金属氧化物半导体低噪声放大器噪声抵消跨导增强
complementary metal oxide semiconductor(CMOS)low noise amplifiernoise cancellationtransconductance boosting
《华东师范大学学报(自然科学版)》 2026 (2)
59-70,12
上海市科委资助项目(22DZ2229004)
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