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基于AFD的MCM互连可靠性有限元分析OA

Interconnect reliability analysis of MCM based on AFD

中文摘要英文摘要

为了分析高集成度导致的多芯片模块(Multi-Chip Module,MCM)互连失效的问题,本文采用ANSYS参数化设计语言(ANSYS Parametric Design Language,APDL)构建了由两个Si开关芯片和两个GaAs低噪声放大器组成的MCM三维模型.基于原子通量散度(Atomic Flux Divergence,AFD)理论,结合有限元分析(Finite Element Analysis,FEA)对MCM进行点耦合瞬态仿真分析,对MCM在交流工作状态、不同热应力下的互连可靠性进行分析,实现了不同电流、线宽以及温度条件下的互连可靠性预测.实验结果证明各因素对MCM互连可靠性的影响和敏感性.此外,还描绘了结构参数和操作参数的可行域空间,从而为MCM的设计提供了有价值的指导.对MCM芯片在交流工作状态以及不同热应力下的互连可靠性研究有助于指导芯片的布局设计,提高芯片可靠性和寿命.

In order to analyze the interconnect reliability ofthe multi-chip module(MCM),a three-dimensional model composed of two Si switch chips and two GaAs low-noise amplifiers was constructed using ANSYS Parametric Design Language(APDL).Based on the Atomic Flux Divergence(AFD)theory and combined with Finite Element Analysis(FEA),point-coupled transient simulation analysis of the MCM was conducted to evaluate the interconnect reliability of the MCM under AC operating conditions and different thermal stresses.Interconnect reliability prediction under different current,line width and temperature conditions was achieved.This interconnect reliability analysis performed considering both transient thermal states and AC operating states for integrated circuits(ICs)simultaneously.The method can be used to guide layout design and improve the reliability and lifetime of MCM chips.

林倩;张博昊;邬海峰

广安理工学院 电子信息工程学院,四川 广安 638000||青海民族大学 智能科学与工程学院,青海 西宁 810007青海民族大学 智能科学与工程学院,青海 西宁 810007青海民族大学 智能科学与工程学院,青海 西宁 810007

信息技术与安全科学

电迁移有限元分析(FEA)多芯片模块(MCM)互连可靠性APDL

electromigrationfinite element analysis(FEA)multi-chip module(MCM)interconnect reliabilityANSYS parametric design language(APDL)

《电子元件与材料》 2026 (3)

337-346,10

国家自然科学基金(62161046)青海省自然科学面上基金(2025-ZJ-954M)

10.14106/j.cnki.1001-2028.20256.1349

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