基于SiC-MOSFET的快前沿固态方波源OA

A solid-state square-wave pulse source was designed and implemented to generate high-voltage square-wave pulses with fast rise times under high-repetition-rate operation.The main circuit adopts a Marx topology with SiC MOSFETs as power switches.A multi-channel magnetically isolated gate driving system was developed to ensure synchronous switching,and a dedicated driving scheme was proposed to suppress magnetic core saturation while enabling flexible adjustment of the drive pulse width.The key factors affecting the pulse rise time were investigated,and corresponding optimizations were performed at different stages of the driving system to enhance the output performance.Experimental results show that the developed pulse source operates stably,with an adjustable output voltage ranging from 1 kV to 10 kV and a pulse width of 0.5 μs to 3 μs.The maximum repetition frequency reaches 100 kHz.A minimum pulse rise time of 35 ns is achieved,and the voltage droop at the pulse flat top is controlled within 5%,which demonstrates excellent square-wave characteristics and reliable parameter controllability.The proposed driving scheme and pulse source provide an effective solution for high-repetition-rate pulsed power applications.