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Al/Bi2O3含能半导体桥的安全性能研究OA

Safety Performances of Al/Bi2O3 Energetic Semiconductor Bridge

中文摘要英文摘要

针对半导体桥(SCB)火工品输出能量较低的问题,设计并制备了Al/Bi2O3 含能薄膜与SCB集成的含能半导体桥(ESCB).通过恒流安全试验、电磁辐照试验、静电安全性试验,对其安全性能进行测试;并通过SCB和Al/Bi2O3-ESCB对B/KNO3钝感点火药的点火试验,验证了Al/Bi2O3-ESCB的输出性能.结果表明:所制备的Al/Bi2O3 含能薄膜成分均匀,结构平滑,与SCB集成制备的Al/Bi2O3-ESCB安全性能良好;安全电流达到1.2A,可通过100 MHz(700 V/m)、400 MHz(700 V/m)、900 MHz(560 V/m)3种条件下的电磁辐照,且性能不发生明显变化;静电放电试验不发火,且电阻不发生明显变化.相较于SCB,可明显提升对恒流激励的抵抗能力和点火输出能力.在47μF、50 V电容激励时,接触条件下和1.3 mm以内非接触条件下均能可靠点燃B/KNO3钝感点火药.

To address the issue of low output energy in pyrotechnics based on semiconductor bridges(SCB),an energetic semiconductor bridge(ESCB)integrated with Al/Bi2O3 energetic films and SCB was designed and prepared.The safety performances of ESCB were evaluated through constant current safety tests,electromagnetic irradiation tests,and e-lectrostatic safety tests.Meanwhile,SCB and Al/Bi2O3-ESCB were ignited on B/KNO3 insensitive ignition powder to verify the output performance of Al/Bi2O3-ESCB.The results indicate that the prepared Al/Bi2O3 energetic film possesses uniform composition and a smooth structure.The Al/Bi2O3-ESCB integrated with the semiconductor bridge exhibits excellent safety performance.The safe current reaches 1.2 A.It can withstand electromagnetic irradiation under three conditions(100 MHz at 700 V/m,400 MHz at 700 V/m,and 900 MHz at 560 V/m)without significant performance degradation.In electrosta-tic discharge test,it does not ignite and its resistance does not change significantly.Compared to SCB,Al/Bi2O3-ESCB significantly enhances the resistance to constant current excitation and improves ignition output capability.Specifically,when excited by a 47 μF and 50 V capacitor,it can reliably ignite the B/KNO3 insensitive ignition powder under both con-tact conditions and non-contact conditions with a gap of 1.3 mm or less.

王云鹏;董晓芬;王端;王凯炳

山西经济管理干部学院(山西经贸职业学院)机电工程系(山西 太原,030024)中北大学环境与安全工程学院(山西 太原,030051)中北大学环境与安全工程学院(山西 太原,030051)中北大学环境与安全工程学院(山西 太原,030051)

军事科技

含能薄膜半导体桥Al/Bi2O3安全性能

energetic filmsemiconductor bridgeAl/Bi2O3safety performance

《爆破器材》 2026 (2)

8-14,7

山西省高等学校科技创新计划项目(2024L474)

10.3969/j.issn.1001-8352.2026.02.002

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