辐照对超快闪烁晶体YAG:Yb闪烁发光的影响研究OA
Investigation on Effects of Irradiation on the Scintillation Luminescence of Ultrafast Scintillation Crystal YAG:Yb
本文研究了不同Yb3+掺杂浓度(1.5%、15%、50%,原子数分数)的YAG:Yb晶体,以及15%Yb3+共掺0.05%Na+和0.05%Ba2+样品在137Cs伽马源辐照前、后透过率,光电子产额及阴极荧光(CL)发光分布特性变化.研究发现,15%Yb3+单掺样品在辐照后辐照诱导吸收最强,但其发光均匀性基本保持稳定,归一化CL强度的RMS/Mean(均方差/平均值)值仅由3.17%(370 nm)和3.20%(475 nm)上升至5.32%和4.66%.而1.5%Yb3+样品虽辐照诱导吸收较弱,但发光离散性显著恶化(370 nm的RMS/Mean值由2.36%上升至10.61%),光电子产额下降幅度约22.2%,能量分辨率由62.0%劣化至116.6%,表明在低掺杂条件下辐照诱导缺陷对发光空间均匀性的破坏可能阻碍能量传递路径从而抑制电荷迁移过程,导致紫外可见发光减弱.50%Yb3+样品辐照后辐照诱导吸收和发光不均性均较显著,但其光电子产额及能量分辨率相对稳定,可能与高掺杂引起的结构畸变对辐照缺陷效应的部分补偿有关.共掺Na+/Ba2+样品在抑制辐照诱导吸收和发光稳定性方面均表现最优,表明适当的共掺杂有助于抑制缺陷形成并提升晶体的抗辐照能力.综合结果表明,YAG:Yb晶体的辐照稳定性不仅受辐照诱导缺陷吸收的影响,还与晶体缺陷对发光均匀性的调控密切相关.
This study investigated the effects of gamma-ray irradiation from a 137Cs source on the transmittance,photoelectron yield,and cathodoluminescence(CL)emission distribution characteristics of YAG:Yb crystals with various Yb3+doping concentrations(1.5%,15%and 50%,atomic fraction),as well as 15%Yb3+co-doped with 0.05%Na+and 0.05%Ba2+.The results show that the 15%Yb3+doped sample exhibits the strongest radiation-induced absorption after gamma-ray irradiation,while its luminescence uniformity remained relatively stable.The normalized CL intensity shows an increase in the root-mean-square deviation to mean ratio(RMS/Mean)from 3.17%(370 nm)and 3.20%(475 nm)to 5.32%and 4.66%,respectively.In contrast,the 1.5%Yb3+doped sample exhibits weaker radiation-induced absorption but significantly degrade emission uniformity,with the RMS/Mean value for the 370 nm emission increasing from 2.36%to 10.61%.Its photoelectron yield decrease by approximately 22.2%,and the energy resolution deteriorate from 62.0%to 116.6%.These results indicate that under low doping conditions,radiation-induced defects disrupt the spatial uniformity of luminescence,potentially obstructing energy transfer pathways and suppressing charge migration processes,thereby weakening the UV-visible emission.The 50%Yb3+doped sample exhibits pronounced radiation-induced absorption and luminescence non-uniformity after irradiation.However,its photoelectron yield and energy resolution remained relatively stable,which may be attributed to partial compensation of radiation defect effects by structural distortion induced by the high doping concentration.The Na+/Ba2+co-doped samples exhibits optimal performance in both radiation-induced absorption suppression and luminescence stability,suggesting that appropriate co-doping can inhibit defect formation and enhance the crystal's radiation resistance.The comprehensive results demonstrate that the radiation resistance of YAG:Yb crystals is influenced not only by radiation-induced defect absorption but also closely related to the regulation of luminescence uniformity by crystal defects.
彭晨;宋柏君;程瑶;范潇宇;杨帆;张璐;潘明艳;颜欣龙;贾宇桢;王瑞辰;段韦恒;何伟民;杨伟虎
南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110中国科学院上海光学精密机械研究所,上海 201800中国科学院上海光学精密机械研究所,上海 201800南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110南开大学物理科学学院,天津 300110
数理科学
YAG:Yb晶体辐照损伤阴极荧光发光均匀性掺杂效应闪烁发光
YAG:Yb crystalradiation damagecathodoluminescenceluminescence uniformitydoping effectscintillation luminescence
《人工晶体学报》 2026 (2)
191-200,10
国家重点研发计划(2022YFB3503900)国家自然科学基金(12175110)
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