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Simulating the Hubbard model with moiré semiconductorsOA

Simulating the Hubbard model with moiré semiconductors

Kin Fai Mak;Jie Shan

Max Planck Institute for the Structure and Dynamics of Matter,Germany||School of Applied and Engineering Physics,Cornell University,USA||Laboratory of Atomic and Solid State Physics,Cornell University,USA||Kavli Institute at Cornell for Nanoscale Science,USAMax Planck Institute for the Structure and Dynamics of Matter,Germany||School of Applied and Engineering Physics,Cornell University,USA||Laboratory of Atomic and Solid State Physics,Cornell University,USA||Kavli Institute at Cornell for Nanoscale Science,USA

《国家科学评论(英文版)》 2026 (4)

3-6,4

10.1093/nsr/nwag069

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