Si3N4/Si2N2O相界面结合力及结构特征OA
Interfacial Bonding Strength and Structural Characteristics in Si3N4/Si2N2O Phase Boundaries
氮化硅陶瓷材料具有优良的综合性能,已在装备制造业和国防建设等领域得到应用.进一步提高氮化硅的力学性能,需深入了解相界面结构及特性,为高性能氮化硅陶瓷材料的研究和开发提供重要的理论基础.本研究通过透射电子显微镜观察了热等静压烧结的氮化硅陶瓷的Si3N4/Si2N2O相界面,构建了 Si3N4/Si2N2O多种相界面模型.利用近列匹配和面重合阵点密度方法分析了Si3N4/Si2N2O相界面的结构特征,并利用分子动力学模拟计算了 Si3N4/Si2N2O相界面的拉伸性能.研究结果表明,发育良好的Si2N2O晶粒与Si3N4晶粒结合紧密,界面处原子匹配有序,面重合原子密度较高,其位向关系为[0 0 0 1]//[0 0 1],(1 0 (1) 0)//(0 1 0);具有(1 0 (1) 0)/(0 1 0)匹配特征的 Si3N4/Si2N2O相界面的分离功高于其他相界面,所能承受的拉伸应力也高于其它相界面.以上结果表明,具有(1 0 (1) 0)/(0 1 0)匹配特征的Si3N4/Si2N2O界面是一类低能稳定的相界面,增加此类相界面将有益于改善氮化硅陶瓷材料的力学性能.
Silicon nitride ceramics exhibit excellent properties and have been widely used in equipment manufacturing and national defense industries.In order to further improve the mechanical properties of silicon nitride,it is necessary to have a better understanding of phase boundary structures and characteristics.This will provide basic knowledge for the R&D of high performance silicon nitride ceramics.Therefore,the Si3N4/Si2N2O phase boundaries in a hot isostatically pressed silicon nitride ceramic ball were observed and characterized using transmission electron microscope,by which the multiple structures of Si3N4/Si2N2O phase boundaries were constructed.The methods of near row matching and planar coincident site density were employed to analyze the structural characteristics of the constructed Si3N4/Si2N2O phase boundaries.The tensile properties of the phase boundaries were studied by molecular dynamic simulations.The results demonstrate that well-developed Si2N2O grains form tightly bonded with Si3N4 grains,exhibiting ordered atomic matching and high planar coincidence site density at the boundary.The orientation relationships are determined to be[0 0 0 1]//[0 0 1]and(1 0 (1) 0)//(0 1 0).Notably,the Si3N4/Si2N2O phase boundary with(1 0 (1) 0)/(0 1 0)matching shows superior performance,demonstrating higher separation work and greater tensile stress resistance compared to other phase boundaries.These findings reveal that the Si3N4/Si2N2O phase boundary with(1 0 (1) 0)/(0 1 0)matching represents a low-energy,stable configuration in silicon nitride ceramics.To increase the population of(1 0 (1) 0)/(0 1 0)phase boundary is good for the improvement of mechanical performance of silicon nitride.
包嘉鑫;王卫国;陈松;罗旭
福建理工大学材料科学与工程学院,福建 福州 350188福建理工大学材料科学与工程学院,福建 福州 350188福建理工大学材料科学与工程学院,福建 福州 350188福建理工大学材料科学与工程学院,福建 福州 350188
通用工业技术
Si3N4陶瓷Si2N2O相界面结合力
Si3N4 ceramicsSi2N2OPhase boundaryInterfacial bonding strength
《材料科学与工程学报》 2026 (1)
75-83,9
国家自然科学基金项目(52271027)
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