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高压电缆用半导电屏蔽料导电网络结构与性能关系研究OA

Effect of conductive network structure on performance of semi-conductive shielding materials for high-voltage cables

中文摘要英文摘要

采用乙烯-丙烯酸丁酯共聚物(EBA)作为基体树脂,选取一款高导电炭黑(CB)为填料,通过熔融共混工艺制备了CB质量分数在18%~34%范围内的半导电屏蔽料.结果表明,随着CB含量的增加,屏蔽料的体积电阻率显著降低,正温度系数(PTC)效应减弱,电学性能温度稳定性提升.当CB含量为34%(质量分数,下同)时,屏蔽料在室温下的体积电阻率降低至11.4 Ω·cm,PTC系数为11.7;屏蔽料的拉伸强度随CB含量增加呈现先增强后减弱的趋势,而断裂伸长率则持续降低;结合动态力学分析结果表明,CB填料形成的团簇网络结构不仅增强了屏蔽料体系的相互作用力,提高了储能模量和损耗模量,同时有效限制了EBA基体的链段运动和滑移现象;流变性能结果证明,屏蔽料呈现典型的剪切变稀特征,且随着CB含量的增加,储能模量、损耗模量和复数黏度均逐渐增大.

Ethylene-butyl acrylate copolymer(EBA)was employed as the matrix resin,and a highly conductive carbon black(CB)was used as the conductive filler to fabricate semi-conductive shielding materials via melt blending,with CB loadings varied from 18 wt%to 34 wt%.The results show that increasing CB content significantly reduces the volume resistivity,weakens the positive temperature coefficient(PTC)effect,and enhances the thermal stability of electrical properties.At a CB loading of 34 wt%,the shielding material presents a room-temperature volume resistivity of 11.4 Ω·cm along with a PTC of 11.7.The tensile strength exhibits a non-monotonic trend,initially increasing and then decreasing with higher CB content,while the elongation at break consistently declines.Dynamic mechanical analysis re-veals that the percolated CB network strengthens interfacial interactions within the composite,thereby increasing both the storage modulus and loss modulus,while simultaneously restricting segmental mobility and chain slippage of the EBA matrix.Rheological measurements further confirm that all formulations display typical shear-thinning behavior,with the storage modulus,loss modulus,and complex viscosity progressively rising as CB content increases,indicative of a well-developed conductive filler network.

何文;侯帅;陈小琼;展云鹏;黎灼佳;洪浚轩;杨巧源

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化学化工

高压电缆半导电屏蔽料导电炭黑团簇网络流变性能

high-voltage cablesemi-conductive shielding materialconductive carbon blackcluster networkrheological property

《中国塑料》 2026 (3)

35-41,7

南方电网公司科技项目[031900KK52210018(GDKJXM20210085)]

10.19491/j.issn.1001-9278.2026.03.007

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