晶硅异质结光伏技术中透明导电氧化物靶材的研究进展与挑战OA

Crystalline silicon heterojunction(HJT)cells,recognized as third-generation photovoltaic technology,overcome the efficiency limitations of PERC and TOPCon through low-temperature process compatibility,high open-circuit voltage,and superior temperature coefficients.Their efficiency ceiling and industrialization process rely critically on multifunctional coordination within transparent conductive oxide(TCO)layers.High-mobility sputtering targets optimized via conduction band dispersion have enabled efficiency breakthroughs,while indium scarcity drives indium-free TCO development.Industrially,physical vapor deposition(PVD)dominates manufacturing due to high deposition rates and localized equipment,whereas reactive plasma deposition(RPD)achieves higher mobility through low-energy particle-induced lattice matching but faces constraints from imported equipment costs and low target utilization.Future advancements demand precise laboratory-to-production mapping of target properties,with roll-to-roll(R2R)process integration and perovskite/silicon tandem spectral synergy poised to propel HJT-based high-efficiency,low-carbon photovoltaic industrialization.