金属氧化物压敏电阻热稳定实验中温度分布与传导特性OA
Temperature distribution and conduction characteristics of metal oxide varistor in the thermal stability experiments
随着对电子设备性能要求的不断提高,金属氧化物压敏电阻(MOV)芯片作为重要的电气保护元件,广泛应用于浪涌抑制等领域.MOV运行使用过程中的温度分布和传导特性,将影响其性能和可靠性.本文通过实验研究MOV芯片在热稳定实验中的温度分布情况,分析温度不均匀性对芯片性能的影响.研究结果表明,在实验过程中,有、无外壳芯片的最高温度位置相近且都在中心区域,稳定后外壳最高温度比芯片最高温度平均低 56.5℃,各电流挡位下壳体内外温差比保持在 38%左右.温度的不均匀性可能导致局部过热,从而加速芯片的老化和失效.研究结果确定MOV的高温度常出现在电极片开孔位置,这可为MOV热稳定测试性能和实际使用中整体热脱离结构提供设计依据.
With the increasing performance requirements of electronic devices,metal oxide varistor(MOV)chips,as important electrical protection components,are widely used in areas such as surge protection.The temperature distribution and conduction characteristics of MOV during operation affect its performance and reliability.This paper experimentally studies the temperature distribution of MOV chips in thermal stability tests and analyzes the impact of temperature non-uniformity on chip performance.The research results show that during the experiment,the highest temperatures of chips with and without a shell are similar and located in the central area.After stabilization,the highest temperature of the shell is 56.5℃lower than that of the chip on average,and the temperature difference ratio between the inside and outside of the shell remains at around 38%at various current levels.Temperature non-uniformity may lead to local overheating,thereby accelerating chip aging and failure.The research results confirm that the high temperature of MOV often occurs at the electrode pad holes,providing a design basis for its thermal stability test performance and overall thermal separation structure in practical use.
肖行;王建忠
北京市雷闪防雷设施检测服务中心,北京 102200航天雷闪(北京)计量技术研究院,北京 102200
金属氧化物压敏电阻(MOV)温度分布热稳定性温度传导
metal oxide varistor(MOV)temperature distributionthermal stabilitytemperature conduction
《电气技术》 2026 (3)
48-51,4
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