具有超晶格电子减速层的氮极性InGaN基红光LED仿真研究OA

The low emission efficiency of InGaN-based red LEDs remains a critical bottleneck for realizing full-col-or nitride-based RGB Micro-LED displays.Enhancing carrier confinement and crystalline quality in the quantum well(QW)active region is essential to improving optical performance.Here,we propose an N-polar InGaN-based red LED featuring an n-In0.1Ga0.9N/GaN superlattice electron deceleration layer(EDL)while removing the conven-tional p-AlGaN electron blocking layer(EBL).Numerical simulations show that the superlattice EDL effectively reduces electron thermal velocity and increases electron capture efficiency within the QWs.Meanwhile,the design maintains a high electron confinement barrier and lowers the hole injection barrier,improving hole capture efficiency and suppressing electron overflow.Compared with a reference N-polar InGaN based red LED with a p-AlGaN EBL,the proposed device achieves a 16％increase in peak internal quantum efficiency and a 32％rise in optical output power.Furthermore,eliminating the p-AlGaN EBL avoids QW crystal degradation caused by high-temperature AlGaN growth,offering a promising route toward high-efficiency InGaN-based red Micro-LEDs.