首页|期刊导航|半导体学报(英文版)|Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible process

Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible processOA

Flexible ITO TFTs with high mobility of 39.1 cm2·V-1·s-1 and excellent uniformity fabricated via mass-production compatible process

Zuoxu Yu;Runxiao Shi;Wangran Wu;Yuzhen Zhang;Tingrui Huang;Wenting Xu;Mingming Liu;Di Gui;Kaizhi Sui;Guangan Yang;Weifeng Sun

School of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaSchool of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaSchool of Integrated Circuits and National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China

InSnOthin film transistorlarge-scale uniformityflexibility

InSnOthin film transistorlarge-scale uniformityflexibility

《半导体学报(英文版)》 2026 (3)

72-80,9

The work is supported in part by the National Natural Sci-ence Foundation of China(62274033),Natural Science Founda-tion of Jiangsu Province(BK20221453),and Fundamental Research Funds for the Central Universities.

10.1088/1674-4926/25060021

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