溅射时间对TiCuN薄膜电磁屏蔽和红外发射性能的影响OA

In order to investigate the effect of sputtering time on the microstructure and proper-ties of TiCuN films,reactive magnetron co-sputtering technique was applied to prepare TiCuN films on glass substrates,and the effects of different sputtering times(1 200,2 400,3 600,and 5 400 s)on the phase compositions,microscopic morphology,resistivity,electromagnetic shiel-ding efficacy,and infrared emissivity of TiCuN films were investigated.The results indicate that the films prepared at sputtering times of 1 200 and 2 400 s are composed of TiCuN,whereas the films are composed of TiCuN and Cu phases when the sputtering time is exceeds 3 600 s.The films prepared at 3 600 s have a higher surface densification,fewer defects,and the lowest electri-cal resistivity,while the films prepared at 5 400 s have significant particle agglomeration on the surface,numerous pores,more defects,and the highest electrical resistivity.The films are mainly absorptive,thereby avoiding secondary pollution of the environment,and the absorption efficiency of the films reaches a maximum value of 49 dB at 3 600 s.The infrared emissivity changes in the prepared films are consistent with the resistivity changes.The infrared emissivity of the films rea-ches a minimum at 3 600 s,of 0.11.