IGBT模块在机械振动与循环热载荷耦合作用下的疲劳失效机理研究OA

To investigate the internal damage evolution mechanism and fatigue life of high-power Insulated Gate Bipolar Transistor(IGBT)modules under multi-physics field coupling effects,fatigue life prediction models were established for IGBTs under single thermal loading,single vibrational loading,and thermal-mechanical coupled loading across multiple time scales.The establishment of these models was based on the integration of theoretical models(e.g.,the Miner linear cumulative damage rule)and the conduct of finite element simulation analysis.Accelerated aging tests based on DC power cycling were conducted to validate the simulation results.The simulation results demonstrate that thermal loading exerts a substantially more pronounced influence on fatigue degradation than vibrational loading.Furthermore,material degradation accelerates under thermal-mechanical coupling conditions,consequently leading to a significant decrease in fatigue life.Both simulation and experimental results consistently identify the chip and the upper solder layer as primary failure hotspots,with damage initiating from the chip and propagating outward;The deviation between the simulated and experimental data is 24.05％.This study provides significant engineering reference value for the reliability assessment,life prediction,and optimized design of IGBT modules.