基于双输出C单元的抗三节点翻转锁存器设计OA

With the development of CMOS technology driving the scaling down of transistor dimensions,radiation-induced Triple-Node Upset(TNU)in CMOS circuits have become a critical issue threatening the reliability of memory devices.To mitigate the impact of soft errors on integrated circuits,this paper proposes a low-overhead latch design capable of tolerating Triple-Node Upsets(LCDOCTL).The LCDOCTL latch mainly consists of a storage module and an interception module,and achieves effective TNU tolerance by utilizing inter-cell data feedback.HSPICE simulation results show that,in comparison with existing TNU-tolerant latch designs,the proposed LCDOCTL latch achieves an average saving of 5.1%in area,70.31%in propagation delay,44.12%in power consumption and 84.66%in Power-Delay Product(PDP).