密栅线n型TOPCon单晶硅太阳电池的量产工艺及电性能研究OA
RESEARCH ON MASS PRODUCTION PROCESS AND ELECTRICAL PERFORMANCE OF n-TOPCon MONO-Si SOLAR CELLS WITH DENSE FINGER LINES
n型TOPCon单晶硅太阳电池表面的扩散浓度高,载流子复合严重,导致其光电转换效率很难提高.然而,密栅线工艺是提高n型TOPCon单晶硅太阳电池光电转换效率的重要途径之一,但其难点在于硅片的扩散方阻、网版参数、峰值烧结工艺与此类太阳电池的匹配性.基于此,以副栅线采用密栅线工艺的n型TOPCon单晶硅太阳电池(下文中的TOPCon太阳电池均指此类太阳电池)的量产为研究对象,在现阶段主流的量产TOPCon太阳电池生产设备条件下,通过实验,研究了采用密栅线工艺时硅片扩散方阻、网版参数和峰值烧结温度对此类太阳电池电性能的影响,并获得最优量产工艺条件.研究结果表明:1)随着硅片扩散方阻的升高,其少子寿命也逐渐增加.当硅片的扩散方阻为 200 Ω/□时,其少子寿命达到最高,为 1456 μs.2)TOPCon太阳电池的短路电流和开路电压与硅片的扩散方阻呈正相关,填充因子与硅片的扩散方阻呈负相关.当硅片的扩散方阻在160~200 Ω/□之间时,TOPCon太阳电池的光电转换效率呈先升高后降低的趋势,且在硅片的扩散方阻为 180 Ω/□时达到最高.3)丝网印刷过程中,通过逐步降低网版总厚度(膜厚+纱厚),并配合丝网线宽的收窄,实现了TOPCon太阳电池正面副栅线宽度和银浆耗量的降低;且随着正面副栅线宽度和银浆耗量逐渐降低,TOPCon太阳电池的光电转换效率呈先增加后降低的趋势.网版膜厚为 5.0 μm、网版纱厚为 9.5 μm、丝网线宽为 10.5 μm是最优网版参数.4)采用密栅线工艺时,硅片的扩散方阻为 180 Ω/□,丝网印刷时网版膜厚为5.0 μm、网版纱厚为 9.5 μm、丝网线宽为 10.5 μm,烧结时峰值烧结温度为 790℃为TOPCon太阳电池最优的量产工艺条件,对应得到的此类太阳电池的光电转换效率最佳,为26.42%.
The high diffusion concentration and severe carrier recombination on the surface of n-TOPCon mono-Si solar cells make it difficult to improve their photoelectric conversion efficiency.However,the dense finger line process is one of the important ways to improve the photoelectric conversion efficiency of n-TOPCon mono-Si solar cells,but its difficulties lie in the compatibility of diffusion resistance of the silicon wafer,screen parameters and peak sintering process with such solar cells.Based on this,this paper takes the mass production of n-TOPCon mono-Si solar cells(hereinafter referred to as TOPCon solar cells)using dense finger line technology as the research object,under the current mainstream production equipment conditions of TOPCon solar cells,the effects of silicon wafer diffusion resistance,screen parameters,and peak sintering temperature on the electrical performance of such solar cells using dense finger line technology are studied through experiments,and the optimal mass production process conditions are obtained.The research results show that:1)As the diffusion sheet resistance of silicon wafer increases,their minority carrier lifetime also gradually increases.When the diffusion sheet resistance of silicon wafer is 200 Ω/□,its minority carrier lifetime reaches its maximum of 1456 μs.2)The short-circuit current and open circuit voltage of TOPCon solar cells are positively correlated with the diffusion sheet resistance of silicon wafer,while the filling factor is negatively correlated with the diffusion sheet resistance of silicon wafer.When the diffusion sheet resistance of silicon wafer is between 160~200 Ω/□,the photoelectric conversion efficiency of TOPCon solar cells shows a trend of first increasing and then decreasing,and reaches its highest value when the diffusion sheet resistance of silicon wafer is 180 Ω/□.3)During the screen printing process,the total thickness of the screen(film thickness+yarn thickness)is gradually reduced,and combined with the narrowing of the screen width,the front finger line width and silver paste consumption of TOPCon solar cells are reduced.And as the width of the front finger line and the consumption of silver paste gradually decrease,the photoelectric conversion efficiency of TOPCon solar cell shows a trend of first increasing and then decreasing.The optimal screen parameters are a screen film thickness of 5.0 μm,a screen yarn thickness of 9.5 μm,and a screen width of 10.5 μm.4)When using the dense finger line process,the diffusion sheet resistance of silicon wafer is 180 Ω/□,the screen film thickness is 5.0 μm,the screen yarn thickness is 9.5 μm,the screen width is 10.5 μm during screen printing,and the peak sintering temperature during sintering is 790℃,which is the optimal mass production process condition of TOPCon solar cell.The corresponding TOPCon solar cell has the best photoelectric conversion efficiency,which is 26.42%.
王守志;周啸颖;王丽婷;舒振兴;刘海涛;韩林芝
中节能太阳能科技(镇江)有限公司,镇江 212132中节能太阳能科技(镇江)有限公司,镇江 212132中节能太阳能科技(镇江)有限公司,镇江 212132中节能太阳能科技(镇江)有限公司,镇江 212132中节能太阳能科技(镇江)有限公司,镇江 212132中节能太阳能科技(镇江)有限公司,镇江 212132
信息技术与安全科学
n型TOPCon单晶硅太阳电池密栅线扩散方阻扩散工艺网版参数峰值烧结温度量产工艺
n-TOPCon mono-Si solar cellsdense finger linediffusion sheet resistancediffusion processscreen parameterspeak sintering temperaturemass production process
《太阳能》 2026 (2)
52-61,10
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