基于NaCI催化的MoS2薄膜制备及电学性能研究OA

Currently,molybdenum disulfide(MoS2)is widely applied in microelectronics and optoelectronic devices due to its exceptional electrical and optical properties.However,achieving large-area,high-quality monolayer MoS2 films remains challenging.A chemical vapor deposition(CVD)method combined with sodium chloride(NaCl)catalysis is employed to batch-fabricate MoS2 films.The films are characterized using optical microscopy,Raman spectroscopy,photoluminescence spectroscopy,and atomic force microscopy.By analyzing the characteristic peak differences in the Raman shifts of MoS2,the effects of three growth parameters—argon flow rate,growth time,and mass of NaCl catalyst—on improving the nucleation density,crystallinity,and coverage of MoS2 films are systematically investigated.The results demonstrate that an appropriate amount of NaCl reduces the melting point of the MoO3 precursor,accelerate precursor conversion,and enhance the growth rate.Comparative studies identified optimal parameters:an argon flow rate of 80 cm3/min(standard state),a growth time of 5 min,and 0.5 mg of NaCl.Under these optimized conditions,large-area,high-quality MoS2 films are successfully synthesized.Electrical tests on field-effect transistors(FETs)fabricated from these films revealed an electron mobility of 3.47 cm2/(V·s).This performance surpasses the typical range of FETs prepared via conventional CVD methods(0.5～3 cm2/(V·s)),confirming the potential of our approach for applications in microelectronics and optoelectronics.