High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devicesOA
High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices
Gaokuo Zhong;Jiangyu Li;Jiaqi Yan;Mingkai Tang;Haoyue Deng;Yangchun Tan;Xiangli Zhong;Changjian Li;Zhen Fan;Jinbin Wang
Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 430100,China||Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,ChinaDepartment of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen 518000,ChinaShenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,China||National-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,ChinaShenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,China||National-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,ChinaInstitute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510000,ChinaShenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518000,China||National-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,ChinaNational-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,ChinaDepartment of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen 518000,ChinaInstitute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510000,ChinaNational-Provincial Laboratory of Special Function Thin Film Materials,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411100,China
ferroelectricferroelectric field-effect transistorshigh-throughputartificial synapsessensing-memory-computing integration
ferroelectricferroelectric field-effect transistorshigh-throughputartificial synapsessensing-memory-computing integration
《国家科学评论（英文版）》 2026 (2)
160-168,9
This work was supported by the National Key Research and Development Program of China(2022YFF0706100 and 2022YFB3807603),the National Natural Science Foundation of China(62474186,12275230 and 52172143),the Science and Technology Innovation Program of Hunan Province(2025RC3107),the Guangdong Natural Science Funds for Dis-tinguished Young Scholar(2024B1515020053)and the Science and Technology Projects in Guangzhou(2022A04J00031).
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