ZnSeTe全彩量子点研究进展及其发光二极管应用OA

Quantum dot light-emitting diodes(QLEDs)have emerged as a promising next-generation self-emissive display technology,offering advantages such as low power consumption,high color purity,and wide color gamut.Currently,high-performance QLEDs largely rely on toxic CdSe or Pb-containing perovskite quantum dots,whose heavy metal content presents environmental risks that restrict industrialization.Consequently,the development of Cd/Pb-free,eco-friendly quantum dot materials has become the core alternative for driving large-scale QLED com-mercialization.Among various candidates,ZnSeTe quantum dots stand out as the most promising single-system full-color emitter,due to their superior luminescence properties and unique band structure tuning mechanism,which en-ables continuous emission across a broad range from 450 nm blue light to 700 nm red light.Nevertheless,the Zn-SeTe system still faces critical challenges,including lattice strain induced by high Te content,interfacial defects,and carrier transport imbalance in devices.This review systematically summarizes the latest progress in the synthesis of ZnSeTe quantum dots and their applications in QLEDs.Focusing on optimization strategies for achieving blue,green,and red primary colors,we analyze the mechanisms and the latest achievements of composition engineering,shell engineering,and surface engineering.Finally,we discuss the future outlook regarding challenges in stability,scale-up synthesis,and device efficiency.