宇航环境下基于RHBD的SRAM抗双节点翻转研究综述OA

In high-reliability applications such as aerospace,satellite communication,and nuclear control systems,multiple node upsets(MNUs)induced by radiation have become a major threat to the stability of static random access memory(SRAM).In recent years,to address the double node upset(DNU)issue,various radiation-hardened-by-design(RHBD)structures have been proposed and exten-sively studied,including S8P8N,QUCCE12T,SARP12T,HRLP16T,RH20T,S6P8N,and RH14T.This paper provides a compre-hensive review of RHBD-based SRAM designs with a focus on their fault-tolerance mechanisms against DNU events.The key design principles,performance metrics,and trade-offs among reliability,power consumption,area,access time,and static stability are sum-marized and compared.Finally,the paper points out that existing RHBD structures still face challenges in achieving fine-grained fault tolerance and balanced overall performance.Future development may focus on charge propagation suppression and feedback mechanism optimization to further enhance DNU resilience.