IGBT模块磁场辐射分布特性仿真与实验研究OA

During high-speed switching,Insulated Gate Bipolar Transistor(IGBT)power modules produce near-field magnetic radiation,creating significant interference issues.To understand this phenomenon,this paper investigates the spatial distribution of the magnetic field inside the module through a combination of simulation and experiment.The investigation begins with a simulation based on Mag-netic Vector Potential(MVP)theory.Using a self-developed finite element solver,a 3D electromagnetic model of a GCV900 series IGBT is simulated to analyze its internal magnetic field characteristics at different frequencies.Following the simulation,experimental validation is performed.A three-phase reactive power test platform was built,allowing for measurements of the magnetic field on the IGBT chip surfaces with a high-precision near-field probe.Both approaches yielded consistent results.They confirm that the magnetic radiation intensity is non-uniformly distributed within the module.Specifically,the area near the DC input,located at the core of the main commutation path,experiences the strongest radiation.In contrast,the area near the AC output is minimally impacted.Ultimately,this research clarifies the magnetic radiation pattern inside IGBT modules,offering a solid theoretical foundation and valuable data for im-proving EMC design and mitigating near-field coupling interference.