8-inch free-standing GaN substrates grown by hydride vapor phase epitaxyOA
8-inch free-standing GaN substrates grown by hydride vapor phase epitaxy
Ruihua Zhang;Jiejun Wu;Tongjun Yu;Qi Wang;Jingquan Lu;Guoyi Zhang;Xinqiang Wang;Fang Liu;Yao Wu;Hongfen Xu;Jinmi He;Ming Liu;Jianhui Wang;Kunyang Li;Ping Wang
Sino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,ChinaDongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,China||State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China||Dongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China||Dongguan Institute of Opto-Electronics,Peking University,Dongguan 571539,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaSino Nitride Semiconductor Co.Ltd.,Dongguan 523518,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics,School of Physics,Peking University,Beijing 100871,China
gallium nitridesingle-crystal substrateslarge sizehydride vapor phase epitaxy
gallium nitridesingle-crystal substrateslarge sizehydride vapor phase epitaxy
《半导体学报（英文版）》 2026 (2)
79-86,8
This work was supported by the National Key Research and Development Program of China(Nos.2022YFB3605203 and 2022YFB3608100)and the National Natural Science Foun-dation of China(Nos.62321004,62227817,and 62374001).
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