Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processingOA
Tailoring oxygen vacancies in Ni-doped In2O3 for improved thin-film transistor stability and performance via solution processing
Fakhari Alam;Sara Ajmal;Muhammad Asim Shahzad;Ghulam Dastgeer;Aamir Rasheed;Gang He
School of Materials Science and Engineering,Anhui University,Hefei 230601,China||Department of Chemistry,Anhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized Materials,Anhui Univer-sity,Hefei 230601,ChinaSchool of Materials Science and Engineering,Anhui University,Hefei 230601,China||Department of Chemistry,University of Ulsan,Ulsan 44610,South KoreaDepartment of Physics,University of Sahiwal,Sahiwal-57000,PakistanDepartment of Physics and Astronomy,Sejong University,Seoul 05006,South KoreaSchool of Materials Science and Engineering,Anhui University,Hefei 230601,China||Department of Chemistry,University of Ulsan,Ulsan 44610,South KoreaSchool of Materials Science and Engineering,Anhui University,Hefei 230601,China
thin-film transistorsNi-doped In2O3solution processingbias illumination stability
thin-film transistorsNi-doped In2O3solution processingbias illumination stability
《半导体学报（英文版）》 2026 (2)
60-71,12
This research is funded by the research startup funding of National Research Foundation(NRF)of Korea through the Ministry of Science and ICT 2022R1G1A1009887.Part of this study was supported by research start-up funding of Anhui University(S202418001/078).
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