TCTA薄膜多晶型结构与晶体生长动力学OA
Polymorphic Structures and Crystal Growth Kinetics in TCTA Thin Films
4,4′,4″-三(咔唑-9-基)-三苯胺(TCTA)是光电器件中常见的有机半导体材料,其结晶行为对器件的光电特性至关重要.然而,研究人员目前对TCTA多晶型结构及其晶体生长动力学过程尚缺乏深入的认识.本研究利用偏光显微镜(POM)及原子力显微镜(AFM),系统研究了TCTA薄膜中多晶型结构的形成条件及晶体生长动力学.结果表明,TCTA薄膜中存在两种熔点差异显著的晶型结构,但当薄膜厚度小于80 nm时,仅观察到熔点较低的晶型Ⅰ.晶体生长动力学分析表明,低熔点晶型的晶体生长速率更快,活化能更低.本工作深化了对TCTA薄膜结晶行为的理解,为调控其微观结构及其均匀性,进而提升器件性能提供了重要依据.
4,4′,4″-tri(N-carbazolyl)triphenylamine(TCTA)is a widely used organic semiconductor material in optoelectronic devices,whose crystallization behavior significantly influences device photoelectric performance.However,a comprehensive understanding of its polymorphic structures and crystal growth kinetics remains lacking.In this study,the formation conditions of polymorphs and their growth kinetics in TCTA thin films were systematically investigated using polarized optical microscopy(POM)and atomic force microscopy(AFM).The results reveal the coexistence of two polymorphs with markedly different melting points.Notably,only Form Ⅰ with a lower melting point is observed when the film thickness is below 80 nm.Crystal growth kinetic analysis demonstrates that the low-melting-point polymorph exhibits faster growth rates and lower activation energy.This study deepens the understanding of crystallization behavior in TCTA thin films and provides valuable insights for tailoring their microstructure and homogeneity to improve the device performance.
姚志远;阳禹辉;左彪
浙江理工大学化学与化工学院,浙江省高分子材料表界面科学重点实验室,杭州 310018浙江理工大学化学与化工学院,浙江省高分子材料表界面科学重点实验室,杭州 310018浙江理工大学化学与化工学院,浙江省高分子材料表界面科学重点实验室,杭州 310018
数理科学
TCTA薄膜多晶型晶体生长动力学膜厚活化能
TCTAthin filmpolymorphismcrystal growth kineticsfilm thicknessactivation energy
《人工晶体学报》 2026 (1)
37-45,9
国家自然科学基金(52103234)浙江省自然科学基金(LY23E030009)中央高校基本科研业务费专项资金(226-2025-00032)浙江大学高分子合成与功能构造教育部重点实验(2024MSF03)
评论