一种新型4H-SiC MOSFET器件设计与研究OA
该文设计一种高温稳定的 4H-SiC MOSFET器件,通过Sentaurus TCAD软件进行仿真研究,并讨论栅氧化层厚度、阈值电压与温度的关系,以及器件各部位最合适的掺杂浓度.之后制备出该器件,并分析其直流温度特性,数据与模拟结果相匹配,可以耐 525℃的高温,并且相关数据达到国际先进水平.
In this paper,a high-temperature stable 4H-SiC MOSFET device is designed and simulated using Sentaurus TCAD software.The relationship between gate oxide thickness,threshold voltage and temperature,and the most suitable doping concentration in each part of the device are discussed.The device was then prepared and its DC temperature characteristics were analyzed.The data matched the simulation results.It can withstand high temperatures of 525℃,and the relevant data reached the international advanced level.
刘翔宇;唐明旦;王申;王祥太;陈佩莹
广东松山职业技术学院,广东 韶关 512126广东松山职业技术学院,广东 韶关 512126广东松山职业技术学院,广东 韶关 512126广东松山职业技术学院,广东 韶关 512126广东松山职业技术学院,广东 韶关 512126
信息技术与安全科学
集成电路场效应管碳化硅高温仿真研究
integrated circuitsfield effect transistorsilicon carbidehigh temperaturesimulation study
《科技创新与应用》 2026 (4)
49-52,57,5
广东松山职业技术学院校级科研项目(2024KJYB07)
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