WSe2/MoSe2横向异质结中的自旋相关光电流特性OA

WSe2/MoSe2 lateral heterojunction was fabricated via chemical vapor deposition.Its helicity dependent photocurrent and linear polarization dependent photocurrent characteristics were systemati-cally investigated using a 1 064 nm laser.Experimental results indicate that the helicity dependent photocurrent exhibits an odd-symmetric trend with varying incidence angles,likely due to the reduced symmetry of the lateral heterojunction corresponding to the C3v point group.The dependence of the linear polarization dependent photocurrent amplitude L1 and L2 on the incidence angle is analyzed.L1 may originate from the combined effects of linear photogalvanic effect and surface photogalvanic effect,while L2 is mainly derived from linear photon drag effect.Further investigation reveals that the helicity dependent photocurrent in the WSe2/MoSe2 lateral heterojunction is influenced by charge transfer effects within the heterojunction and is strongly correlated with differences in electron relaxation time and conduction band curvature between WSe2 and MoSe2.