PFI引入PEDOT∶PSS空穴注入层提升Cu-In-Zn-S基量子点发光二极管性能OA

Electron-hole injection imbalance caused by slow hole injection is one of the major factors limiting the performance improvement of multinary copper chalcogenide quantum dot light-emitting diodes(QLEDs).This study designed a strategy to modify poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT∶PSS)using a nafion perfluorinated resin(PFI).Taking advantage of the self-assembly property of PFI,a hole injection layer(PFI-PEDOT∶PSS)with a gradient energy level was constructed.Single hole-transporting devices further demonstrate that the PFI-PEDOT∶PSS hole injection layer can effectively reduce the hole injection barrier and enhance hole injection efficiency,thereby improving device performance.Finally,the peak external quantum efficiency of the electroluminescent devices fabricated with PFI-PEDOT∶PSS as the hole injection layer and Cu-In-Zn-S quantum dots as the emitting layer reached 4.7%,which was 2.2 times that of the PEDOT∶PSS-based devices.The results indicate that this modification strategy of incorporating PFI into the PEDOT∶PSS hole injection layer can effectively enhance the performance of Cu-In-Zn-S-based QLEDs,and also lays an important research foundation for the subsequent industrial application of environmentally friendly QLEDs.