CdZnSe基量子点用于高性能纯蓝光量子点发光二极管OA

Quantum dot light-emitting diodes(QLEDs)have attracted extensive attention in high-resolution displays and emerging fields such as augmented reality due to their narrow emission spectra,wide color gamut,high brightness,and low power consumption.However,the electroluminescent efficiency and stability of blue devices remain significantly inferior to those of red and green devices,and the lack of high-performance pure blue quantum dots(QDs)has limited the development of full-color displays.In this study,we report a synthesis strategy based on a ZnSe core with Cd ion-mediated emission tuning.CdZnSe core QDs were successfully prepared by rapid Cd2+injection under high-temperature conditions to induce ion exchange,achieving an emission peak at 469 nm with a photoluminescence quantum yield(PLQY)of 79%.Subsequently,a multilayer shell structure of ZnSe/ZnSeS/ZnS was epitaxially grown on the core QDs,effectively passivating surface defects,enhancing structural stability,and significantly suppressing non-radiative recombination.The resulting multilayer-capped QDs exhibited a stable emission peak at 463 nm with a PLQY further increased to 92%,showing pure blue emission.QLED devices fabricated using these QDs demonstrated excellent electroluminescent performance,with a peak external quantum efficiency(EQE)of 18.5%and a maximum brightness of 6.34×104 cd/m2.In summary,this strategy,combining ion exchange with multilayer shell passivation,enables the fabrication of high-PLQY,stable pure blue QDs and high-performance QLED devices.