SiOxNy薄膜对量产n型双面TOPCon单晶硅太阳电池正面钝化效果的影响研究OA

This paper investigates the passivation effect of SiOxNy thin film on the front of mass-produced n-bifacial TOPCon mono-Si solar cells(hereinafter referred to as TOPCon solar cells)through experiments.Using plasma enhanced chemical vapor deposition(PECVD)technology to deposit two types of dielectric passivation layers on the front of TOPCon solar cells,Al2O3/SiNx stack is first prepared as a dielectric passivation layer.Then,a layer of SiOxNy thin film is inserted into the Al2O3/SiNx stack to prepare an Al2O3/SiOxNy/SiNx stack as another dielectric passivation layer.In addition,by adjusting the ratio of process gases(NH3,SiH4 and N2O)in the reactor during the preparation of SiOxNy thin films,SiOxNy thin films with different compositions are obtained,thereby preparing solar cell samples and corresponding PV module samples with different front dielectric passivation layer structures and compositions.These samples are subjected to film thickness,minority carrier lifetime,EQE,electrical performance and PID performance testing are conducted to investigate the effects of changes in process gas flow rate on the passivation performance of SiOxNy thin film and overall dielectric passivation layer,as well as the effects of different dielectric passivation layer structures and compositions on the electrical performance of solar cells and the anti PID performance of PV modules.The research results show that:1)Compared to using Al2O3/SiNx stack,using Al2O3/SiOxNy/SiNx stack as the dielectric passivation layer on the front of TOPCon solar cells can effectively improve the passivation effect of such solar cells,thereby enhancing their electrical performance.2)The optimal process conditions for depositing SiOxNy thin films are a gas flow rate of 1000 sccm for SiH4,a gas flow rate of 2500 sccm for NH3,and a gas flow rate of 7500 sccm for N2O.The corresponding photoelectric conversion efficiency of TOPCon solar cell can reach 26.35%,the difference between the photoelectric conversion efficiency obtained after the anti PID performance test of PV modules and before the test decreased to 1.21%,which is relatively small.In summary,introducing SiOxNy thin film into the Al2O3/SiNx stack of the front dielectric passivation layer of TOPCon solar cells not only meets the requirements for mass production of such solar cell production lines,but also has a certain degree of improvement in photoelectric conversion efficiency and anti PID performance.