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应用于CMOS图像传感器的12 bit全局共用型列级SAR ADCOA

A 12 bit global shared column SAR ADC for CMOS image sensor

中文摘要英文摘要

针对传统逐次逼近型模数转换器(SAR ADC)在CMOS图像传感器列级读出电路中的面积和功耗突出问题,提出一种面向大阵列的全局共用DAC型高速SAR ADC.该结构基于多列共用核心DAC的思想,将传统列级SAR ADC中面积需求最大的电容阵列DAC提取出来,采用不同权重的DAC信号,建立一个全局共用型DAC并采用多路选择加法器替代了传统的多列复用技术.该方法将每列SAR ADC简化后仅需要比较器、多路选择加法器以及部分数字逻辑,在保证SAR ADC的速度及精度优势的同时大幅度减小了其面积需求.基于 55nm 1P4M CMOS工艺对所提出的方法进行了详细的电路设计和仿真验证,在模拟电压为 3.3 V、数字电压为 1.2 V、时钟频率为 120 MHz、输入信号范围为 1.6 V的情况下,设计实现的 12-bit SAR ADC的静态参数DNL(differential nonlinearity)为-0.8/0.8 LSB,INL(integral nonlinearity)为-1.4/0.4 LSB,信噪失真比(SNR)达到 68.24 dB,有效位数为 11.02 bit,面积为 10 μm×350 μm,功耗为 264 μW.相比现有的 SAR ADC,在保证SAR ADC高速、高精度的同时,也使ADC面积需求大幅度减小,为SAR ADC在高速CMOS图像传感器的列级读出电路中的应用提供了理论支撑.

To address the issues of area and power consumption in traditional successive approximation register analog-to-digital converters(SAR ADCs)used in column-level readout circuits of CMOS image sensors,this paper proposes a high-speed SAR ADC with a globally shared DAC,tailored for large arrays.The proposed architecture is based on the concept of sharing a core DAC across multiple columns.It extracts the largest area-consuming component of traditional column-level SAR ADCs,the capacitor array DAC,and replaces it with a globally shared DAC that utilizes different weighted DAC signals,along with a multiplexer and adder,instead of traditional column-level multiplexing techniques.This method simplifies each column-level SAR ADC to only require a comparator,a multiplexer-adder,and partial digital logic,significantly reducing the area requirements while maintaining the speed and precision advantages of SAR ADCs. The proposed method was designed and simulated using a 55nm 1P4M CMOS process.With an analog voltage of 3.3V,a digital voltage of 1.2V,a clock frequency of 120MHz,and an input signal range of 1.6V,the 12-bit SAR ADC designed in this work achieves a static differential nonlinearity(DNL)of-0.8/0.8 LSB,an integral nonlinearity(INL)of-1.4/0.4 LSB,a signal-to-noise ratio(SNR)of 68.24 dB,and an effective number of bits(ENOB)of 11.02 bits.The total area is 10μm×350μm,with a power consumption of 264 μW.Compared to existing SAR ADCs,this design reduces the area requirements significantly while maintaining high speed and precision,providing theoretical support for the application of SAR ADCs in the column-level readout circuits of high-speed CMOS image sensors.

郭仲杰;张金澳;许睿明;刘绥阳

西安理工大学自动化与信息工程学院,西安 710048西安理工大学自动化与信息工程学院,西安 710048西安理工大学自动化与信息工程学院,西安 710048西安理工大学自动化与信息工程学院,西安 710048

信息技术与安全科学

CMOS图像传感器列级ADCSAR ADC全并行全局共用

CMOS image sensorcolumn ADCSAR ADCfully parallelglobal shared

《电子科技大学学报》 2026 (1)

77-84,8

国家自然科学基金(62171367)陕西省创新能力支撑计划(2022TD-39)西安理工大学校企协同基金(252062302)

10.12178/1001-0548.2024271

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