高功率GaN基蓝光二极管激光器性能退化实验研究OA

[Background]High power GaN-based blue diode lasers have wide application prospects in industrial processing,copper material welding,3D printing,underwater laser communication and other technical fields.The Chip On Submount(COS)unit packaged in the heat sink is a kind of single component that can be applied to the fabrication of high power GaN-based blue diode lasers.The device has the advantages of low thermal resistance and small size.[Purpose]However,due to the low reliability of this device,the industrial application of this COS single component in high power GaN-based blue diode lasers is still limited to a certain extent,and its performance degradation factors need to be studied.[Methods]In this paper,based on optical microscopy,scanning electron microscopy(SEM)and energy dispersive spectroscopy(EDS),the degradation factors of high power blue light COS components were studied.[Results]Experimental study and analysis show that the performance degradation factors of blue light diode laser chip are mainly related to defects in the GaN matrix material,residual deposition on the cavity surface and photochemical corrosion.Through comparative experiments,it is demonstrated that the reliability of high power blue COS single components can be improved by hermetic packaging,which provides a reference for the subsequent engineering application of high power blue COS units.[Conclusions]Finally,experimental research and analysis indicate that the performance degradation factors of high-power blue laser diodes(LDs)are primarily related to defects in the GaN substrate material,foreign matter deposition on the cavity surface,and photochemical corrosion factors.Comparative experiments further reveal that the threshold current growth rate of LDs with gas sealing(about 0.14 mA/h)is lower than that of non-gas-sealed LDs(about 0.27 mA/h).This demonstrates that gas-sealed packaging of high-power blue LD COS units devices can enhance their reliability.