Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiationOA
Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation
Sangyeob Kim;Jeongtae Kim;Dong-Seok Kim;Hyuncheol Bae;Min-Woo Ha;Ogyun Seok
School of Electrical and Electronic Engineering,Pusan National University,Busan,KoreaKorea Multi-purpose Accelerator Complex,Korea Atomic Energy Research Institute,Gyeongju,Korea||Department of Semiconductor System Engineering,Kumoh National Institute of Technology,Gumi,KoreaKorea Multi-purpose Accelerator Complex,Korea Atomic Energy Research Institute,Gyeongju,KoreaElectronics and Telecommunications Research Institute,Daejeon,KoreaDepartment of Electrical Engineering,Myongji University,Yongin,KoreaSchool of Electrical and Electronic Engineering,Pusan National University,Busan,Korea
SiCproton irradiationedge terminationradiation hardnessTID effects
SiCproton irradiationedge terminationradiation hardnessTID effects
《半导体学报（英文版）》 2026 (1)
82-89,8
This research was supported by the IITP(Institute for Infor-mation&Communications Technology Planning&Evalua-tion)under the ITRC(Information Technology Research Cen-ter)support program(IITP-2025-RS-2024-00438288),grant funded by the Korea government(MSIT)and National Research Council of Science&Technology(NST)grant by the MSIT(Aerospace Semiconductor Strategy Research Project No.GTL25051-000),and the EDA tool was supported by the IC Design Education Center(IDEC),Korea.
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