Optoelectronic synapses based on IGZO/Bi3.25La0.75Ti3O12 heterojunctions for human brain learning mechanism simulationOA
Optoelectronic synapses based on IGZO/Bi3.25La0.75Ti3O12 heterojunctions for human brain learning mechanism simulation
Dongping Yang;Hao Chen;Zhenhua Tang;Qijun Sun;Xingui Tang
School of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,ChinaSchool of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,ChinaSchool of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,ChinaSchool of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,ChinaSchool of Physics and Optoelectric Engineering&Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applica-tions,Guangdong University of Technology,Guangzhou 510006,China
optoelectronic synapsesthin filmsneural networks
optoelectronic synapsesthin filmsneural networks
《半导体学报（英文版）》 2026 (1)
72-81,10
This work was financially supported by the National Natu-ral Science Foundation of China(Grant Nos.11574057 and 12172093)and the Guangdong Basic and Applied Basic Research Foundation(Grant No.2021A1515012607).
评论