A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noiseOA
A deep-junction single-photon detector with field polysilicon gate structure for increased photon detection efficiency and reduced dark count noise
Zhentao Ni;Dajing Bian;Haoxiang Jiang;Xiaoming Huang;Yue Xu
College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaCollege of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaCollege of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaCollege of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology,Nanjing 210023,ChinaCollege of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration&Micro-Assembly Technology,Nanjing 210023,China
single-photon avalanche diode(SPAD)fill factor(FF)photon detection efficiency(PDE)dark count rate(DCR)
single-photon avalanche diode(SPAD)fill factor(FF)photon detection efficiency(PDE)dark count rate(DCR)
《半导体学报（英文版）》 2026 (1)
64-71,8
This work has been supported by the National Natural Science Foundation of China under Grant 62171233,the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891,and the Jiangsu Province Gradua-te Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169.
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