Influencing factors of noise characteristics in EBCMOS with uniformly doped P-type substratesOA

作者：Xinyue He;Gangcheng Jiao;Hongchang Cheng;Tianjiao Lu;Ye Li;De Song;Weijun Chen

作者单位：School of Science,Changchun University of Science and Technology,Changchun 130022,ChinaScience and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,ChinaScience and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,ChinaSchool of Science,Changchun University of Science and Technology,Changchun 130022,ChinaSchool of Science,Changchun University of Science and Technology,Changchun 130022,ChinaSchool of Science,Changchun University of Science and Technology,Changchun 130022,ChinaSchool of Science,Changchun University of Science and Technology,Changchun 130022,China

中文关键词：EBCMOSdark current electron numbergainSNR

英文关键词：EBCMOSdark current electron numbergainSNR

刊名：《半导体学报（英文版）》 2026 (1)

页码/页数：29-40,12

DOI：10.1088/1674-4926/25030039