金刚石硅空位色心变温光致发光光谱的研究OA

This study investigates the controlled preparation of silicon vacancy(SiV)color centers in diamonds and their fluorescence temperature response characteristics,aiming to reveal the influence of methane parameters in microwave plasma chemical vapor deposition(MPCVD)on the fluorescence spectrum of diamond color cen-ters.By adjusting the methane flow ratio(0.5％～2％),diamond films and particles were prepared and charac-terized using scanning electron microscopy(SEM),atomic force microscopy(AFM)and temperature-dependent fluorescence spectroscopy.The results indicate that as the temperature increases from 100 K to 300 K,the fluo-rescence peak position of the SiV color center shifts from 737.7 nm to 738.7 nm,and the full width at half maxi-mum(FWHM)increases from 4.7 nm to 7.3 nm,with both the peak position and FWHM exhibiting tempera-ture dependence.Within the 100 K to 200 K range,the rate of change of FWHM for diamond particles is signifi-cantly higher than that for films,demonstrating greater temperature sensitivity.Additionally,as the methane ratio increases,the FWHM gradually broadens.By optimizing the preparation process,this study elucidates the rela-tionship between the fluorescence characteristics of SiV color centers,temperature,and process parameters,pro-viding theoretical support and experimental evidence for high-precision temperature sensing technology.