4T/8T像素结构CMOS图像传感器的空间辐照影响及加固技术研究OA

Complementary metal oxide semiconductor(CMOS)contact image sensor(CIS)is often used to detect the direction of beacon light in the acquisition,tracking and pointing(ATP)system in space optical communication.Space irradiation will affect the working performance and service life of CMOS image sensor.The research on the influence principle of space irradiation on devices and the anti-irradiation reinforcement technology can improve the practical engineering application ability of CMOS image sensors.The 4T/8T(transistor)pixel structure CMOS image sensor is widely used in the current ATP system.In this paper,the research results of irradiation test and the anti-irradiation reinforcement technology of 4T/8T pixel structure CIS at home and abroad are summarized in the three aspects of total ionization dose effect,displacement damage effect and single event effect.A reinforcement single event effect technology for CIS of 8T pixel structure is proposed.The single event upset effect of CMOS image sensor and FPGA is corrected without power off and restart.In addition,the shutdown and restart of CMOS image sensor during single event latch-up is realized,and the anti-radiation effect performance of CMOS image sensor is improved.