在两体近似碰撞模型基础上,采用SRIM程序对自注入硅离子及其造成的损伤在样品的分布进行了研究,模拟了Si<'+>自注入si晶体的Si<'+>深度分布几率和注入时的能量传递.计算结果表明:在相同注入能量的情况下,注入Si<'+>的分布概率是恒定的,在注入过程中电离能是阻止Si<'+>进一步深入的主导因素.论文还初步讨论了注入剂量和退火温度对发光强度的影响,以及W缺陷的可能形成原因.
Based on the binary collision approximation (BCA), the defect distribution in the self-ion implantation and its energy transfer in Si crystal had been investigated by using the SRIM program.The calculated results indicated that the distribution probability of implanted Si+ is constant in the crystal Si, if the implantation energies are the same.The dominating factor which stops the implanted Si+ further deepening is demonstrated to be the value of the ionization energy.In this paper, the effects of implanted does and annealing temperature on the photoluminescence intensity and the origin of W defect were well discussed.
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