利用溶胶-凝胶旋涂法，在单晶硅基片(100)上分别制得了厚度约为0.31 μm的(Al2O3)0.10(Sc2O3)0.08(ZrO2)0.82和0.36 μm的(Sc2O3)0.125(TiO2)0.175(ZrO2)0.70固体电解质纳米晶薄膜。烧结实验结果表明，两种薄膜均在650℃以上开始晶化，温度越高，晶化越完全，在800℃可完全晶化；所得纳米晶颗粒呈纯的萤石结构立方相；铝和钛掺杂的纳米晶颗粒的平均大小分别为47和51 nm。铝掺杂的薄膜非常均匀致密，然而，钛掺杂的薄膜存在少量微气孔。
Dense,crack-free and uniform nanocrystalline (Al2O3）0.10(Sc2O3)0.08(ZrO2)0.82and (Sc2O3)0.125(TiO2)0.175(ZrO2)0.70 thin films with thickness of 0.31 μm and 0.36 μm respectively on Si(100) substrate,have been successfully prepared by a Sol\|Gel spin coating method.Cubic nanocrystals can be obtained at relatively low sintering temperature with an average grain size of about 47 nm and 51 nm respectively.The aluminia-doped ScSZ thins film are the same dense as the ScSZ thin films.However,there are a small amount of pinholes found in the microstructure of the titania-doped ScSZ films.
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